차세대 반도체 로직, 메모리 소재/소자 개발
극박막 나노소재 및 하이브리드 이종접합 구조 제조 기술
신기능 나노소재를 활용한 미래 ICT 정보 연산/저장/전송 소자 개발
새로운 원리의 전자/광전 소자 개발
학력
(Ph.D.) University of Texas at Austin, Electrical Engineering
(B.S) Seoul National University, Electrical Engineering
약력/경력
1989~1997 삼성전기 종합연구소 선임연구원
2002~2003 일본 AIST, 특수연구원
2003~2011 싱가폴국립대학 전기공학부, 교수
학술지 논문
(2024)
One‐Shot Remote Integration of Macromolecular Synaptic Elements on a Chip for Ultrathin Flexible Neural Network System.
ADVANCED MATERIALS.
36,
51
(2023)
Dual-logic-in-memory implementation with orthogonal polarization of van der Waals ferroelectric heterostructure.
INFOMAT.
6,
2
(2023)
Artificial Visual Systems Fabricated with Ferroelectric van der Waals Heterostructure for In-Memory Computing Applications.
ACS NANO.
17,
21
(2023)
Electronic and electrocatalytic applications based on solution-processed two-dimensional platinum diselenide with thickness-dependent electronic properties.
ECOMAT.
5,
8
(2023)
SnS/MoS2 van der Waals heterojunction for in-plane ferroelectric field-effect transistors with multibit memory and logic characteristics.
ECOMAT.
5,
5
(2023)
Intact Metal/Metal Halide van der Waals Junction Enables Reliable Memristive Switching with High Endurance.
ADVANCED FUNCTIONAL MATERIALS.
33,
14
(2022)
Extrapolation method for reliable measurement of Seebeck coefficient of organic thin films.
ORGANIC ELECTRONICS.
108,
(2022)
Enhanced Electromagnetic Absorption of Cement Composites by Controlling the Effective Cross-sectional Area of MXene Flakes with Diffuse Reflection Based on Carbon Fibers.
CONSTRUCTION AND BUILDING MATERIALS.
348,
-
(2022)
Broad-Spectrum Photodetection with High Sensitivity Via Avalanche Multiplication in WSe2.
ADVANCED OPTICAL MATERIALS.
10,
22
SUPER-STEEP SWITCHING DEVICE AND INVERTER DEVICE USING THE SAME.
18/598,689.
20250128.
미국
超傾斜スイッチング素子及びこれを用いたインバータ素子.
2024-514727.
20241031.
일본
2차원 물질 및 그 제조 방법.
10-2021-0112885.
20231017.
대한민국
부성 트랜스컨덕턴스 소자 및 이를 이용한 다치 메모리 소자.
10-2021-0145161.
20230612.
대한민국
NEGATIVE TRANSCONDUCTANCE DEVICE AND MULTI-VALUED INVERTER LOGIC DEVICE USING THE SAME.
17/095259.
20230314.
미국
THREE-DIMENSIONAL SEMICONDUCTOR INTEGRATED CIRCUIT.
17/175839.
20221115.
미국
SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF.
17/666,448.
20220825.
미국
Photodetector and Method of Manufacturing the Photodetector.
17/072,199.
20220614.
미국
광검출 소자 및 이의 제조방법.
10-2019-0129496.
20220419.
대한민국
부성 트랜스컨덕턴스 소자 및 이를 이용한 다치 인버터 논리 소자.
10-2019-0143104.
20210827.
대한민국
부성 트랜스컨덕턴스 소자, 이를 이용한 부성 저항 소자 그리고 다치 논리 소자.
10-2019-0145250.
20210827.
대한민국
광 검출 장치, 이의 제조방법 및 이를 이용한 광 검출 방법.
10-2019-0141394.
20210624.
대한민국
3차원 반도체 집적 회로.
10-2020-0017291.
20210603.
대한민국
자기저항 구조체 및 그 제조 방법, 이를 구비하는 전자소자.
10-2013-0137885.
20210224.
대한민국
시냅스 소자 및 이의 제조 방법.
10-2019-0055291.
20210128.
대한민국
PROTEIN-BASED NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME.
US 16/136,570 .
20200630.
미국
부성 미분 전달컨덕턴스 특성을 갖는 반도체 소자 및 그 제조방법.
10-2018-0148295.
20200625.
대한민국
ELECTRIC DEVICE BASED ON BLACK PHOSPHOROUS SINGLE CHANNEL WITH MULTI-FUNCTION AND METHOD OF MANUFACTURING THE SAME.
US 16/044,918.
20200331.
미국
도체-반도체 측면 이종접합구조, 이들의 제조방법, 이를 포함하는 스위칭 소자 및 이차원 전도성 박막의 제조방법.
10-2018-0081113.
20200122.
대한민국
원자 스위칭 장치.
10-2017-0096005.
20200116.
대한민국
수상/공훈
국내외 주요학회 운영위원
학술회의논문
(2024)
2D Semiconductor Gate Stack and Implementation of Steep-Switching Impact Ionization Transistor.
MATERIALS RESEARCH SOCIETY.
미국
(2024)
Bidirectional Polarization-Integrated Van Der Waals Ferroelectric Field-Effect Transistor for Multi-State Storage and Dual-Logic-in-Memory Computing.
ECS.
미국
(2023)
Ultra-steep Switching Impact Ionization Field-effect Transistor Fabricated with Homogeneous WSe2 Junction.
IUMRS-International Conference on Materials & 11th International Conference on Materials for Advanced Technologies 2023.
싱가포르
(2018)
Black Phosphorus p-Doping by Integration of MoS2 Nanoparticles.
ECS (Electrochemical Society).
미국
(2018)
Synthesis of molybdenum carbide and formation of an epitaxial Mo2C/MoS2 hybrid structure via carburization of molybdenum disulfide.
ECS (Electrochemical Society).
미국
(2016)
Integration of 2D Materials for Nanoelectronic Devices.
ICEM2016.
싱가포르
(2015)
Preparation and properties of hybrid 2-d materials.
IUMRS 2015.
대한민국
(2015)
Integration of heterogeneous 2D hybrid material systems and their applications.
ECS (Electrochemical Society) 2015.
미국
(2015)
Preparation and properties of two-dimensional black phosphorus.
Nano Korea.
대한민국
(2015)
Thickness controlled synthesis of CVD hexagonal Boron Nitride films and their properties as a dielectric layer.
Nano Korea.
대한민국
(2015)
Two dimensional transition metal carbides: preparation and properties.
Nano Korea.
대한민국
(2015)
Synthesis of BN-doped mono layer graphene and its properties.
MRS (Material Research Society) 2015.
미국
(2015)
Synthesis of layer-controlled large-area high-quality MoS2 films and their properties.
MRS (Material Research Society) 2015.
미국
(2014)
Protein controlled doping of single layer graphene film.
International Conference on Microelectronics and Plasma Technology 2014.
대한민국
(2014)
Effects of substrate materials on the graphene-based device performances.
International Conference on Microelectronics and Plasma Technology 2014.
대한민국
(2014)
Towards the control of grain size and the continuous layer growth of 2-dimensional MoS2 film.
International Conference on Microelectronics and Plasma Technology 2014.
대한민국
(2014)
Formation of High Quality Hybrid h-BN/graphene Vertical Structure with Sequential CVD Process.
MRS 2014, Spring.
미국
(2014)
Nondestructive Accurate Method to Probing Graphene Defects with Optical Microscopy.
MRS 2014, Spring.
미국
(2013)
Nanoscale 2-dimensional hybrid structure of graphene/h-BN: synthesis, properties, and growth mechanism.
ENGE 2013 (Electronic Materials and Nanotechnology for Green Environment).
대한민국
(2013)
Protein controlled graphene doping.
The 2nd International Workshop on Convergence in Condensed Matter and Nano Physics.
대한민국
